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ASML, TSMC to advance transition to large-format EUV photomasks
While High NA EUV will be adopted for production using the current 6-inch masks, the transition to larger, 12-inch masks is expected to further increase fab productivity, lower chipmaking costs and remove stitching constraints, benefiting the entire semiconductor industry.
ASML and TSMC have announced a collaborative initiative to lead the semiconductor industry’s transition to a larger-format Extreme Ultraviolet (EUV) lithography photomask.
While High NA EUV will be adopted for production using the current 6-inch masks, the transition to larger, 12-inch masks is expected to further increase fab productivity, lower chipmaking costs and remove stitching constraints, benefiting the entire semiconductor industry. It will enable advanced chip manufacturers to fully leverage the advantages of High NA EUV, making future generations of leading-edge chips more cost-effective, TSMC said.
“We expect the adoption of High NA EUV to increase progressively along the device scaling roadmap, first using current 6-inch masks and then further supported by 12-inch masks, which enable greater scanner productivity and allow the i...